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PD -96300 IRLH5036PbF HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = 4.5V) 60 5.5 44 1.2 100h V m nC A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25C) Applications * * * * Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (< 5.5 m @ Vgs = 4.5V ) Low Thermal Resistance to PCB (< 0.5C/W) 100% Rg tested Low Profile (<0.9 mm) results in Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLH5036TRPBF IRLH5036TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Absolute Maximum Ratings VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @ TC(Bottom) = 25C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 16 20 16 100h 100h 400 3.6 250 0.029 -55 to + 150 Units V A g g c W W/C C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes through are on page 8 www.irf.com 1 04/12/10 IRLH5036PbF Static @ TJ = 25C (unless otherwise specified) BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 --- --- --- 1.0 --- --- --- --- --- 109 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.07 3.7 4.6 --- -6.6 --- --- --- --- --- 90 44 9.5 4.5 18 12 23 21 1.2 23 48 28 15 5360 600 250 Max. Units Conditions --- V VGS = 0V, ID = 250uA --- V/C Reference to 25C, ID = 1.0mA 4.4 VGS = 10V, ID = 50A m 5.5 VGS = 4.5V, ID = 50A 2.5 V VDS = VGS, ID = 150A --- mV/C 20 VDS = 60V, VGS = 0V A VDS = 60V, VGS = 0V, TJ = 125C 250 VGS = 16V 100 nA -100 VGS = -16V --- S VDS = 25V, ID = 50A --- nC VGS = 10V, VDS = 30V, ID = 50A 66 --- VDS = 30V --- VGS = 4.5V nC --- ID = 50A --- --- --- nC VDS = 16V, VGS = 0V e e --- --- --- --- --- --- --- --- ns VDD = 30V, VGS = 4.5V ID = 50A RG=1.7 VGS = 0V VDS = 25V = 1.0MHz pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Min. --- --- Typ. --- --- Typ. --- --- Max. 286 50 Units mJ A Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Max. Units 100h A 400 Conditions MOSFET symbol showing the integral reverse G S D --- --- 1.3 V --- 28 42 ns --- 134 201 nC Time is dominated by parasitic Inductance p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 30V di/dt = 500A/s e eA Thermal Resistance RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient f f Parameter g g Typ. --- --- --- --- Max. 0.5 15 35 22 Units C/W 2 www.irf.com IRLH5036PbF 1000 TOP VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V 1000 TOP VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 2.7V 10 1 2.7V 60s PULSE WIDTH 0.1 0.1 1 Tj = 25C 1 60s PULSE WIDTH Tj = 150C 0.1 1 10 100 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50A VGS = 10V ID, Drain-to-Source Current (A) 100 T J = 150C 10 1 T J = 25C VDS = 25V 60s PULSE WIDTH 0.1 1.5 2.5 3.5 4.5 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance Vs. Temperature 14 ID= 50A VGS, Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 VDS= 48V VDS= 30V VDS= 12V C, Capacitance (pF) 10000 Ciss 1000 Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage www.irf.com 3 IRLH5036PbF 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150C 100 100sec 10 1msec 10msec T J = 25C 10 1 Tc = 25C Tj = 150C Single Pulse 0.1 0.10 1 10 100 VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 175 150 ID, Drain Current (A) VGS(th) , Gate threshold Voltage (V) Fig 8. Maximum Safe Operating Area 3.0 Limited By Package 2.5 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (C) 2.0 1.5 1.0 ID = 1.0A ID = 1.0mA ID = 150A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature 1 Thermal Response ( Z thJC ) C/W Fig 10. Threshold Voltage Vs. Temperature D = 0.50 0.1 0.20 0.10 0.02 0.01 0.01 0.05 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com IRLH5036PbF RDS(on), Drain-to -Source On Resistance (m ) 12 ID = 50A 10 1200 EAS , Single Pulse Avalanche Energy (mJ) 1000 800 600 400 200 0 ID TOP 15A 18A BOTTOM 50A 8 T J = 125C 6 4 T J = 25C 2 2 4 6 8 10 12 14 16 25 50 75 100 125 150 VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp VDS L DRIVER RG 20V D.U.T IAS tp + V - DD A I AS 0.01 Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms VDS VGS RG V10V GS Pulse Width 1 s Duty Factor 0.1 RD 90% D.U.T. + VDS -VDD 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms www.irf.com 5 IRLH5036PbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Vds Vgs Id L 0 DUT 1K S VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform 6 www.irf.com IRLH5036PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ("4 or 5 digits") MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRLH5036PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm Yes guidelines ) MS L1 (per JE DE C J-S T D-020D ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.229mH, RG = 50, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2010 8 www.irf.com |
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